WM02N50M Todos los transistores

 

WM02N50M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WM02N50M
   Código: R20
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 1.25 W
   Voltaje máximo drenador - fuente |Vds|: 20 V
   Voltaje máximo fuente - puerta |Vgs|: 12 V
   Corriente continua de drenaje |Id|: 5 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
   Carga de la puerta (Qg): 9.6 nC
   Tiempo de subida (tr): 1.3 nS
   Conductancia de drenaje-sustrato (Cd): 120 pF
   Resistencia entre drenaje y fuente RDS(on): 0.021 Ohm
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de MOSFET WM02N50M

 

WM02N50M Datasheet (PDF)

 ..1. Size:453K  way-on
wm02n50m.pdf

WM02N50M WM02N50M

WM02N50M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 5A DS DR

 9.1. Size:524K  way-on
wm02n75m2.pdf

WM02N50M WM02N50M

WM02N75M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I =7.5A DS DR

 9.2. Size:387K  way-on
wm02n08l.pdf

WM02N50M WM02N50M

WM02N08L N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS DR

 9.3. Size:439K  way-on
wm02n08f.pdf

WM02N50M WM02N50M

WM02N08F N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs G V = 20V, I = 0.75A DS DDR

 9.4. Size:360K  way-on
wm02n70me.pdf

WM02N50M WM02N50M

WM02N70ME N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 7A DS DR

 9.5. Size:928K  way-on
wm02n20g.pdf

WM02N50M WM02N50M

WM02N20G N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 2A DS DR

 9.6. Size:450K  way-on
wm02n08h.pdf

WM02N50M WM02N50M

WM02N08H N-Channel Enhancement MOSFET Features D Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS DR

 9.7. Size:328K  way-on
wm02n28m.pdf

WM02N50M WM02N50M

Document: W0803348, Rev: B WM02N28M M N-Channel MOSFET Features V = 20V, I = 2.8A DS DR

 9.8. Size:500K  way-on
wm02n31m.pdf

WM02N50M WM02N50M

WM02N31M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 3.1A DS DR

 9.9. Size:408K  way-on
wm02n08g.pdf

WM02N50M WM02N50M

WM02N08G N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS DR

 9.10. Size:449K  way-on
wm02n45m.pdf

WM02N50M WM02N50M

WM02N45M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 4.5A DS DR

 9.11. Size:350K  way-on
wm02n08fb.pdf

WM02N50M WM02N50M

WM02N08FB N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs G V = 20V, I = 0.75A DS DDR

 9.12. Size:440K  way-on
wm02n20f.pdf

WM02N50M WM02N50M

WM02N20F N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 2A DS DGR

 9.13. Size:416K  way-on
wm02n25m.pdf

WM02N50M WM02N50M

WM02N25M N-Channel MOSFET Features V = 20V, I = 2.5A DS DR

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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