All MOSFET. WM02N50M Datasheet

 

WM02N50M Datasheet and Replacement


   Type Designator: WM02N50M
   Marking Code: R20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 9.6 nC
   tr ⓘ - Rise Time: 1.3 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: SOT23
 

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WM02N50M Datasheet (PDF)

 ..1. Size:453K  way-on
 wm02n50m.pdf pdf_icon

WM02N50M

WM02N50M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 5A DS DR

 9.1. Size:524K  way-on
 wm02n75m2.pdf pdf_icon

WM02N50M

WM02N75M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I =7.5A DS DR

 9.2. Size:387K  way-on
 wm02n08l.pdf pdf_icon

WM02N50M

WM02N08L N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS DR

 9.3. Size:439K  way-on
 wm02n08f.pdf pdf_icon

WM02N50M

WM02N08F N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs G V = 20V, I = 0.75A DS DDR

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Datasheet: WM02N08H , WM02N08L , WM02N20F , WM02N20G , WM02N25M , WM02N28M , WM02N31M , WM02N45M , 12N60 , WM02N70ME , WM02N75M2 , WM02P06F , WM02P06G , WM02P06H , WM02P06L , WM02P160R , WM02P18F .

History: SRC4N65TF | NP90N04MDH | PTP20N60A | FTK4828F

Keywords - WM02N50M MOSFET datasheet

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