WM02N50M Datasheet and Replacement
Type Designator: WM02N50M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 1.3 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: SOT23
WM02N50M substitution
WM02N50M Datasheet (PDF)
wm02n50m.pdf

WM02N50M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 5A DS DR
wm02n75m2.pdf

WM02N75M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I =7.5A DS DR
wm02n08l.pdf

WM02N08L N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS DR
wm02n08f.pdf

WM02N08F N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs G V = 20V, I = 0.75A DS DDR
Datasheet: WM02N08H , WM02N08L , WM02N20F , WM02N20G , WM02N25M , WM02N28M , WM02N31M , WM02N45M , 12N60 , WM02N70ME , WM02N75M2 , WM02P06F , WM02P06G , WM02P06H , WM02P06L , WM02P160R , WM02P18F .
History: NTBG020N120SC1
Keywords - WM02N50M MOSFET datasheet
WM02N50M cross reference
WM02N50M equivalent finder
WM02N50M lookup
WM02N50M substitution
WM02N50M replacement
History: NTBG020N120SC1



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