WM02N70ME MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: WM02N70ME
   Código: 3416E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 8.8 nC
   trⓘ - Tiempo de subida: 4.7 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET WM02N70ME

WM02N70ME Datasheet (PDF)

..1. Size:360K way-on
wm02n70me.pdf

WM02N70ME N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 7A DS DR

8.1. Size:524K way-on
wm02n75m2.pdf

WM02N75M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I =7.5A DS DR

9.1. Size:387K way-on
wm02n08l.pdf

WM02N08L N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS DR

9.2. Size:439K way-on
wm02n08f.pdf

WM02N08F N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs G V = 20V, I = 0.75A DS DDR

9.3. Size:928K way-on
wm02n20g.pdf

WM02N20G N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 2A DS DR

9.4. Size:450K way-on
wm02n08h.pdf

WM02N08H N-Channel Enhancement MOSFET Features D Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS DR

9.5. Size:328K way-on
wm02n28m.pdf

Document: W0803348, Rev: B WM02N28M M N-Channel MOSFET Features V = 20V, I = 2.8A DS DR

9.6. Size:453K way-on
wm02n50m.pdf

WM02N50M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 5A DS DR

9.7. Size:500K way-on
wm02n31m.pdf

WM02N31M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 3.1A DS DR

9.8. Size:408K way-on
wm02n08g.pdf

WM02N08G N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS DR

9.9. Size:449K way-on
wm02n45m.pdf

WM02N45M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 4.5A DS DR

9.10. Size:350K way-on
wm02n08fb.pdf

WM02N08FB N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs G V = 20V, I = 0.75A DS DDR

9.11. Size:440K way-on
wm02n20f.pdf

WM02N20F N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 2A DS DGR

9.12. Size:416K way-on
wm02n25m.pdf

WM02N25M N-Channel MOSFET Features V = 20V, I = 2.5A DS DR

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