WM02N70ME Datasheet and Replacement
Type Designator: WM02N70ME
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4.7 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOT23
WM02N70ME substitution
WM02N70ME Datasheet (PDF)
wm02n70me.pdf
WM02N70ME N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 7A DS DR
wm02n75m2.pdf
WM02N75M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I =7.5A DS DR
wm02n08l.pdf
WM02N08L N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS DR
wm02n08f.pdf
WM02N08F N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs G V = 20V, I = 0.75A DS DDR
Datasheet: WM02N08L , WM02N20F , WM02N20G , WM02N25M , WM02N28M , WM02N31M , WM02N45M , WM02N50M , 2N7002 , WM02N75M2 , WM02P06F , WM02P06G , WM02P06H , WM02P06L , WM02P160R , WM02P18F , WM02P20G .
History: NTJD4158CT1G
Keywords - WM02N70ME MOSFET datasheet
WM02N70ME cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: NTJD4158CT1G
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