WM02P23M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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WM02P23M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20 V, I = -2.3 A DS DR

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wm02p26m.pdf pdf_icon

WM02P26M P-Channel Enhancement MOSFET Features Way-on Small Single MOSFETs V = -20V, I = -2.6A DS DR

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WM02P20G P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -2A DS DR

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WM02P40ME P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -4A DS DR

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wm02p06f.pdf pdf_icon

WM02P06F P-Channel Enhancement MOSFET Features G Way-on Small Signal MOSFETs D V = -20 V, I = -0.66 A DS DSR

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wm02p06l.pdf pdf_icon

Document: W0803106, Rev: B WM02P06L 1 P-Channel MOSFET Features V = -20 V, I = -0.66 A DS DR

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wm02p41m.pdf pdf_icon

WM02P41M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20 V, I = -4.1A DS DR

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wm02p56m3.pdf pdf_icon

WM02P56M3 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -5.6A DS DR

9.6. Size:536K way-on
wm02p56m2.pdf pdf_icon

WM02P56M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -5.6A DS DR

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wm02p06h.pdf pdf_icon

WM02P06H P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs D V = -20 V, I = -0.66 A DS DR

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Document:W0803119, Rev: B WM02P40M3 M P-Channel MOSFET Features V = -20 V, I = -4.0 A DS DR

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wm02p06g.pdf pdf_icon

WM02P06G P-Channel MOSFET Features Way-on Small Signal MOSFETs V = -20 V, I = -0.66 A DS DR

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wm02p60m2.pdf pdf_icon

Document:W0803226, Rev: B WM02P60M2 2 P-Channel MOSFET Features V = -20 V, I = -6A DS DR

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wm02p30me.pdf pdf_icon

WM02P30ME P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -3A DS DR

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wm02p18f.pdf pdf_icon

WM02P18F P-Channel Enhancement MOSFET Features G Way-on Small Signal MOSFETs V = -20V, I = -1.8A DDS DR

9.13. Size:597K way-on
wm02p160r.pdf pdf_icon

WM02P160R 20V P-Channel Enhancement Mode Power MOSFET GDPin1DDescriptionSDSDSDDWM02P160R uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDDFeatures DFN2020-6L V = -20V, I = -16A DS DR

WM02P23M Datasheet (PDF)

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