WM02P23M Datasheet and Replacement
Type Designator: WM02P23M
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 2.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 51 nS
Cossⓘ - Output Capacitance: 37 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
Package: SOT23
WM02P23M substitution
WM02P23M Datasheet (PDF)
wm02p23m.pdf

WM02P23M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20 V, I = -2.3 A DS DR
wm02p26m.pdf

WM02P26M P-Channel Enhancement MOSFET Features Way-on Small Single MOSFETs V = -20V, I = -2.6A DS DR
wm02p20g.pdf

WM02P20G P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -2A DS DR
wm02p40me.pdf

WM02P40ME P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -4A DS DR
Datasheet: WM02N75M2 , WM02P06F , WM02P06G , WM02P06H , WM02P06L , WM02P160R , WM02P18F , WM02P20G , IRF9540N , WM02P26M , WM02P30ME , WM02P40M3 , WM02P40ME , WM02P41M , WM02P56M2 , WM02P56M3 , WM02P60M2 .
History: APQ84SN06A | IXFT30N60X
Keywords - WM02P23M MOSFET datasheet
WM02P23M cross reference
WM02P23M equivalent finder
WM02P23M lookup
WM02P23M substitution
WM02P23M replacement
History: APQ84SN06A | IXFT30N60X



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