WM03N58M2 Todos los transistores

 

WM03N58M2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WM03N58M2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 5.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 1.5 nS
   Cossⓘ - Capacitancia de salida: 64 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de MOSFET WM03N58M2

 

WM03N58M2 Datasheet (PDF)

 ..1. Size:535K  way-on
wm03n58m2.pdf

WM03N58M2
WM03N58M2

WM03N58M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 5.8A DS DR

 6.1. Size:480K  way-on
wm03n58m.pdf

WM03N58M2
WM03N58M2

WM03N58M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 5.8A DS DR

 8.1. Size:467K  way-on
wm03n57m.pdf

WM03N58M2
WM03N58M2

WM03N57M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30 V, I = 5.8 A DS DR

 9.1. Size:2401K  way-on
wm03n01g.pdf

WM03N58M2
WM03N58M2

Document: W0803083, Rev: D WM03N01G 1 N-Channel Trench MOSFET Features V = 30V, I = 0.1A DS DR

 9.2. Size:503K  way-on
wm03n32m.pdf

WM03N58M2
WM03N58M2

WM03N32M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 3.2A DS DR

 9.3. Size:466K  way-on
wm03n06m.pdf

WM03N58M2
WM03N58M2

WM03N06M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 0.6A DS DR

 9.4. Size:810K  way-on
wm03n09f.pdf

WM03N58M2
WM03N58M2

WM03N09F N-Channel Enhancement MOSFET Features G Way-on Small Signal MOSFETs D V = 30V, I = 0.93A DS DR

 9.5. Size:829K  way-on
wm03n86m2.pdf

WM03N58M2
WM03N58M2

WM03N86M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 8.6A DS DR

 9.6. Size:769K  way-on
wm03n115a.pdf

WM03N58M2
WM03N58M2

WM03N115A 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDWM03N115A uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. S SFeatures SG V = 30V, I = 11.5A DS DSOP-8LR

 9.7. Size:351K  way-on
wm03n01l.pdf

WM03N58M2
WM03N58M2

Document: W0803102, Rev: C WM03N01L N-Channel MOSFET Features V = 30V, I = 0.1A DS DR

 9.8. Size:466K  way-on
wm03n01h.pdf

WM03N58M2
WM03N58M2

WM03N01H N-Channel Enhancement MOSFET Features D Way-on Small Signal MOSFETs V = 30V, I = 0.1A DS DR

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