WM03N58M2 Datasheet and Replacement
Type Designator: WM03N58M2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 5.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 1.5 nS
Cossⓘ - Output Capacitance: 64 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: SOT23
- MOSFET Cross-Reference Search
WM03N58M2 Datasheet (PDF)
wm03n58m2.pdf

WM03N58M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 5.8A DS DR
wm03n58m.pdf

WM03N58M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 5.8A DS DR
wm03n57m.pdf

WM03N57M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30 V, I = 5.8 A DS DR
wm03n01g.pdf

Document: W0803083, Rev: D WM03N01G 1 N-Channel Trench MOSFET Features V = 30V, I = 0.1A DS DR
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: BSZ035N03LSG | SVF9N90F
Keywords - WM03N58M2 MOSFET datasheet
WM03N58M2 cross reference
WM03N58M2 equivalent finder
WM03N58M2 lookup
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History: BSZ035N03LSG | SVF9N90F



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