WM03N58M2 - Даташиты. Аналоги. Основные параметры

WM03N58M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 5.8A DS DR

WM03N58M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 5.8A DS DR

WM03N57M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30 V, I = 5.8 A DS DR

Document: W0803083, Rev: D WM03N01G 1 N-Channel Trench MOSFET Features V = 30V, I = 0.1A DS DR

WM03N32M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 3.2A DS DR

WM03N06M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 0.6A DS DR

WM03N09F N-Channel Enhancement MOSFET Features G Way-on Small Signal MOSFETs D V = 30V, I = 0.93A DS DR

WM03N86M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 8.6A DS DR

WM03N115A 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDWM03N115A uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. S SFeatures SG V = 30V, I = 11.5A DS DSOP-8LR

Document: W0803102, Rev: C WM03N01L N-Channel MOSFET Features V = 30V, I = 0.1A DS DR

WM03N01H N-Channel Enhancement MOSFET Features D Way-on Small Signal MOSFETs V = 30V, I = 0.1A DS DR