WM03P115R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WM03P115R
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 11.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 176 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
Paquete / Cubierta: DFN2020-6L
Búsqueda de reemplazo de WM03P115R MOSFET
WM03P115R Datasheet (PDF)
wm03p115r.pdf

WM03P115R 30V P-Channel Enhancement Mode Power MOSFET GDPin1DDescriptionSDSDSDDWM03P115R uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDDFeatures DFN2020-6L V = -30V, I = -11.5A DS DR
wm03p41m2.pdf

WM03P41M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30 V, I = -4.1A DS DR
wm03p41m.pdf

WM03P41M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30 V, I = -4.1A DS DR
wm03p91a.pdf

WM03P91A 30V P-Channel Enhancement Mode Power MOSFET Description DDDWM03P91A uses advanced power trench technology that has been Despecially tailored to minimize the on-state resistance and yet Smaintain superior switching performance. SSGFeatures SOP-8L V = -30V, I = -9.1A DS DR
Otros transistores... WM03N06M , WM03N09F , WM03N115A , WM03N32M , WM03N57M , WM03N58M , WM03N58M2 , WM03N86M2 , IRFZ46N , WM03P27M , WM03P41M , WM03P41M2 , WM03P42M , WM03P42M2 , WM03P51A , WM03P56M2 , WM03P60M2 .
History: MM15N050P | SED5852 | 2SK2845 | SVD50N06MJ | TSM2NB60CI | NCE65N800D
History: MM15N050P | SED5852 | 2SK2845 | SVD50N06MJ | TSM2NB60CI | NCE65N800D



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