WM03P115R Datasheet and Replacement
Type Designator: WM03P115R
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 176 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: DFN2020-6L
WM03P115R substitution
WM03P115R Datasheet (PDF)
wm03p115r.pdf

WM03P115R 30V P-Channel Enhancement Mode Power MOSFET GDPin1DDescriptionSDSDSDDWM03P115R uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDDFeatures DFN2020-6L V = -30V, I = -11.5A DS DR
wm03p41m2.pdf

WM03P41M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30 V, I = -4.1A DS DR
wm03p41m.pdf

WM03P41M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30 V, I = -4.1A DS DR
wm03p91a.pdf

WM03P91A 30V P-Channel Enhancement Mode Power MOSFET Description DDDWM03P91A uses advanced power trench technology that has been Despecially tailored to minimize the on-state resistance and yet Smaintain superior switching performance. SSGFeatures SOP-8L V = -30V, I = -9.1A DS DR
Datasheet: WM03N06M , WM03N09F , WM03N115A , WM03N32M , WM03N57M , WM03N58M , WM03N58M2 , WM03N86M2 , IRFZ46N , WM03P27M , WM03P41M , WM03P41M2 , WM03P42M , WM03P42M2 , WM03P51A , WM03P56M2 , WM03P60M2 .
Keywords - WM03P115R MOSFET datasheet
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History: SQJ500AEP | WM03P27M



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