WM03P115R - Даташиты. Аналоги. Основные параметры

WM03P115R 30V P-Channel Enhancement Mode Power MOSFET GDPin1DDescriptionSDSDSDDWM03P115R uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDDFeatures DFN2020-6L V = -30V, I = -11.5A DS DR

WM03P41M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30 V, I = -4.1A DS DR

WM03P41M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30 V, I = -4.1A DS DR

WM03P91A 30V P-Channel Enhancement Mode Power MOSFET Description DDDWM03P91A uses advanced power trench technology that has been Despecially tailored to minimize the on-state resistance and yet Smaintain superior switching performance. SSGFeatures SOP-8L V = -30V, I = -9.1A DS DR

WM03P27M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30V, I = -2.7A DS DR

WM03P42M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30V, I = -4.2A DS DR

WM03P42M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30 V, I = -4.2A DS DR

WM03P56M2 P-Channel Enhancement MOSFET Features Way-on Small Single MOSFETs V = -30 V, I = -5.6A DS DR

WM03P60M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30V, I = -6A DS DR

WM03P51A 30V P-Channel Enhancement Mode Power MOSFET DescriptionDDWM03P51A uses advanced power trench technology that has been Despecially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. S SFeatures SG V = -30V, I = -5.1A DS DSOP-8LR