WM03P27M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WM03P27M
Código: S7
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.3 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 2.7 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Carga de la puerta (Qg): 3.9 nC
Tiempo de subida (tr): 37 nS
Conductancia de drenaje-sustrato (Cd): 47 pF
Resistencia entre drenaje y fuente RDS(on): 0.088 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET WM03P27M
WM03P27M Datasheet (PDF)
wm03p27m.pdf
WM03P27M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30V, I = -2.7A DS DR
wm03p41m2.pdf
WM03P41M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30 V, I = -4.1A DS DR
wm03p41m.pdf
WM03P41M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30 V, I = -4.1A DS DR
wm03p91a.pdf
WM03P91A 30V P-Channel Enhancement Mode Power MOSFET Description DDDWM03P91A uses advanced power trench technology that has been Despecially tailored to minimize the on-state resistance and yet Smaintain superior switching performance. SSGFeatures SOP-8L V = -30V, I = -9.1A DS DR
wm03p42m2.pdf
WM03P42M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30V, I = -4.2A DS DR
wm03p42m.pdf
WM03P42M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30 V, I = -4.2A DS DR
wm03p56m2.pdf
WM03P56M2 P-Channel Enhancement MOSFET Features Way-on Small Single MOSFETs V = -30 V, I = -5.6A DS DR
wm03p115r.pdf
WM03P115R 30V P-Channel Enhancement Mode Power MOSFET GDPin1DDescriptionSDSDSDDWM03P115R uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDDFeatures DFN2020-6L V = -30V, I = -11.5A DS DR
wm03p60m2.pdf
WM03P60M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30V, I = -6A DS DR
wm03p51a.pdf
WM03P51A 30V P-Channel Enhancement Mode Power MOSFET DescriptionDDWM03P51A uses advanced power trench technology that has been Despecially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. S SFeatures SG V = -30V, I = -5.1A DS DSOP-8LR
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
