WM03P27M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: WM03P27M
   Código: S7
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 3.9 nC
   trⓘ - Tiempo de subida: 37 nS
   Cossⓘ - Capacitancia de salida: 47 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.088 Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET WM03P27M

WM03P27M Datasheet (PDF)

..1. Size:500K way-on
wm03p27m.pdf

WM03P27M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30V, I = -2.7A DS DR

9.1. Size:538K way-on
wm03p41m2.pdf

WM03P41M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30 V, I = -4.1A DS DR

9.2. Size:561K way-on
wm03p41m.pdf

WM03P41M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30 V, I = -4.1A DS DR

9.3. Size:751K way-on
wm03p91a.pdf

WM03P91A 30V P-Channel Enhancement Mode Power MOSFET Description DDDWM03P91A uses advanced power trench technology that has been Despecially tailored to minimize the on-state resistance and yet Smaintain superior switching performance. SSGFeatures SOP-8L V = -30V, I = -9.1A DS DR

9.4. Size:538K way-on
wm03p42m2.pdf

WM03P42M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30V, I = -4.2A DS DR

9.5. Size:539K way-on
wm03p42m.pdf

WM03P42M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30 V, I = -4.2A DS DR

9.6. Size:519K way-on
wm03p56m2.pdf

WM03P56M2 P-Channel Enhancement MOSFET Features Way-on Small Single MOSFETs V = -30 V, I = -5.6A DS DR

9.7. Size:618K way-on
wm03p115r.pdf

WM03P115R 30V P-Channel Enhancement Mode Power MOSFET GDPin1DDescriptionSDSDSDDWM03P115R uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDDFeatures DFN2020-6L V = -30V, I = -11.5A DS DR

9.8. Size:596K way-on
wm03p60m2.pdf

WM03P60M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30V, I = -6A DS DR

9.9. Size:966K way-on
wm03p51a.pdf

WM03P51A 30V P-Channel Enhancement Mode Power MOSFET DescriptionDDWM03P51A uses advanced power trench technology that has been Despecially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. S SFeatures SG V = -30V, I = -5.1A DS DSOP-8LR

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: