All MOSFET. WM03P27M Datasheet

 

WM03P27M Datasheet and Replacement


   Type Designator: WM03P27M
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 47 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.088 Ohm
   Package: SOT23
 

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WM03P27M Datasheet (PDF)

 ..1. Size:500K  way-on
 wm03p27m.pdf pdf_icon

WM03P27M

WM03P27M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30V, I = -2.7A DS DR

 9.1. Size:538K  way-on
 wm03p41m2.pdf pdf_icon

WM03P27M

WM03P41M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30 V, I = -4.1A DS DR

 9.2. Size:561K  way-on
 wm03p41m.pdf pdf_icon

WM03P27M

WM03P41M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30 V, I = -4.1A DS DR

 9.3. Size:751K  way-on
 wm03p91a.pdf pdf_icon

WM03P27M

WM03P91A 30V P-Channel Enhancement Mode Power MOSFET Description DDDWM03P91A uses advanced power trench technology that has been Despecially tailored to minimize the on-state resistance and yet Smaintain superior switching performance. SSGFeatures SOP-8L V = -30V, I = -9.1A DS DR

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Datasheet: WM03N09F , WM03N115A , WM03N32M , WM03N57M , WM03N58M , WM03N58M2 , WM03N86M2 , WM03P115R , 4N60 , WM03P41M , WM03P41M2 , WM03P42M , WM03P42M2 , WM03P51A , WM03P56M2 , WM03P60M2 , WM03P91A .

Keywords - WM03P27M MOSFET datasheet

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