All MOSFET. WM03P27M Datasheet

 

WM03P27M MOSFET. Datasheet pdf. Equivalent


   Type Designator: WM03P27M
   Marking Code: S7
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 2.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3.9 nC
   trⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 47 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.088 Ohm
   Package: SOT23

 WM03P27M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WM03P27M Datasheet (PDF)

 ..1. Size:500K  way-on
 wm03p27m.pdf

WM03P27M WM03P27M

WM03P27M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30V, I = -2.7A DS DR

 9.1. Size:538K  way-on
 wm03p41m2.pdf

WM03P27M WM03P27M

WM03P41M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30 V, I = -4.1A DS DR

 9.2. Size:561K  way-on
 wm03p41m.pdf

WM03P27M WM03P27M

WM03P41M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30 V, I = -4.1A DS DR

 9.3. Size:751K  way-on
 wm03p91a.pdf

WM03P27M WM03P27M

WM03P91A 30V P-Channel Enhancement Mode Power MOSFET Description DDDWM03P91A uses advanced power trench technology that has been Despecially tailored to minimize the on-state resistance and yet Smaintain superior switching performance. SSGFeatures SOP-8L V = -30V, I = -9.1A DS DR

 9.4. Size:538K  way-on
 wm03p42m2.pdf

WM03P27M WM03P27M

WM03P42M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30V, I = -4.2A DS DR

 9.5. Size:539K  way-on
 wm03p42m.pdf

WM03P27M WM03P27M

WM03P42M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30 V, I = -4.2A DS DR

 9.6. Size:519K  way-on
 wm03p56m2.pdf

WM03P27M WM03P27M

WM03P56M2 P-Channel Enhancement MOSFET Features Way-on Small Single MOSFETs V = -30 V, I = -5.6A DS DR

 9.7. Size:618K  way-on
 wm03p115r.pdf

WM03P27M WM03P27M

WM03P115R 30V P-Channel Enhancement Mode Power MOSFET GDPin1DDescriptionSDSDSDDWM03P115R uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDDFeatures DFN2020-6L V = -30V, I = -11.5A DS DR

 9.8. Size:596K  way-on
 wm03p60m2.pdf

WM03P27M WM03P27M

WM03P60M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30V, I = -6A DS DR

 9.9. Size:966K  way-on
 wm03p51a.pdf

WM03P27M WM03P27M

WM03P51A 30V P-Channel Enhancement Mode Power MOSFET DescriptionDDWM03P51A uses advanced power trench technology that has been Despecially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. S SFeatures SG V = -30V, I = -5.1A DS DSOP-8LR

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: FQD2N30TM | BSO211P | HAT2279N | SSM6N29TU

 

 
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