WM03P56M2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WM03P56M2
Código: 3P56
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 5.6 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Carga de la puerta (Qg): 28.7 nC
Tiempo de subida (tr): 44 nS
Conductancia de drenaje-sustrato (Cd): 136 pF
Resistencia entre drenaje y fuente RDS(on): 0.028 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET WM03P56M2
WM03P56M2 Datasheet (PDF)
wm03p56m2.pdf
WM03P56M2 P-Channel Enhancement MOSFET Features Way-on Small Single MOSFETs V = -30 V, I = -5.6A DS DR
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wm03p115r.pdf
WM03P115R 30V P-Channel Enhancement Mode Power MOSFET GDPin1DDescriptionSDSDSDDWM03P115R uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDDFeatures DFN2020-6L V = -30V, I = -11.5A DS DR
wm03p60m2.pdf
WM03P60M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30V, I = -6A DS DR
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
