WM03P56M2 Datasheet and Replacement
Type Designator: WM03P56M2
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 44 nS
Cossⓘ - Output Capacitance: 136 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SOT23
WM03P56M2 substitution
WM03P56M2 Datasheet (PDF)
wm03p56m2.pdf

WM03P56M2 P-Channel Enhancement MOSFET Features Way-on Small Single MOSFETs V = -30 V, I = -5.6A DS DR
wm03p51a.pdf

WM03P51A 30V P-Channel Enhancement Mode Power MOSFET DescriptionDDWM03P51A uses advanced power trench technology that has been Despecially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. S SFeatures SG V = -30V, I = -5.1A DS DSOP-8LR
wm03p41m2.pdf

WM03P41M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30 V, I = -4.1A DS DR
wm03p41m.pdf

WM03P41M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30 V, I = -4.1A DS DR
Datasheet: WM03N86M2 , WM03P115R , WM03P27M , WM03P41M , WM03P41M2 , WM03P42M , WM03P42M2 , WM03P51A , AON6380 , WM03P60M2 , WM03P91A , WM04N50M , WM04P50M , WM04P56M2 , WM05DP01D , WM05N02G , WM05N02M .
Keywords - WM03P56M2 MOSFET datasheet
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