WMB027N08HG4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMB027N08HG4
Código: 027N08H4
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 192.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 195 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 VQgⓘ - Carga de la puerta: 77.9 nC
trⓘ - Tiempo de subida: 19.2 nS
Cossⓘ - Capacitancia de salida: 960 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0027 Ohm
Paquete / Cubierta: PDFN5060-8L
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WMB027N08HG4 Datasheet (PDF)
wmb027n08hg4.pdf
WMB027N08HG4 80V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB027N08HG4 uses Wayon's 4th generation power trench MOSFET DDtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50
wmb025n06lg4.pdf
WMB025N06LG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB025N06LG4 uses Wayon's 4th generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5
wmb023n03lg2.pdf
WMB023N03LG2 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB023N03LG2 uses Wayon's 2nd generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5
wmb020n06hg4.pdf
WMB020N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB020N06HG4 uses Wayon's 4th generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5
wmb025n06hg4.pdf
WMB025N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB025N06HG4 uses Wayon's 4th generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5
wmb020n03lg4.pdf
WMB020N03LG4 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB020N03LG4 uses Wayon's 4th generation power trench MOSFET D Dtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506
wmb02dn10t1.pdf
WMB02DN10T1 100V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD2 D1D2 D1D1WMB02DN10T1 uses advanced power trench technology that has D2D1D2been especially tailored to minimize the on-state resistance and yet S1G1G2maintain superior switching performance. S2S2G1G2S1Features PDFN5060-8L V = 100V, I = 3.5A DS DR
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
