WMB027N08HG4
MOSFET. Datasheet pdf. Equivalent
Type Designator: WMB027N08HG4
Marking Code: 027N08H4
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 192.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 195
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 77.9
nC
trⓘ - Rise Time: 19.2
nS
Cossⓘ -
Output Capacitance: 960
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0027
Ohm
Package:
PDFN5060-8L
WMB027N08HG4
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMB027N08HG4
Datasheet (PDF)
..1. Size:640K way-on
wmb027n08hg4.pdf 
WMB027N08HG4 80V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB027N08HG4 uses Wayon's 4th generation power trench MOSFET DDtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50
9.1. Size:713K way-on
wmb025n06lg4.pdf
WMB025N06LG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB025N06LG4 uses Wayon's 4th generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5
9.2. Size:637K way-on
wmb023n03lg2.pdf
WMB023N03LG2 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB023N03LG2 uses Wayon's 2nd generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5
9.3. Size:648K way-on
wmb020n06hg4.pdf
WMB020N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB020N06HG4 uses Wayon's 4th generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5
9.4. Size:648K way-on
wmb025n06hg4.pdf
WMB025N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB025N06HG4 uses Wayon's 4th generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5
9.5. Size:640K way-on
wmb020n03lg4.pdf
WMB020N03LG4 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB020N03LG4 uses Wayon's 4th generation power trench MOSFET D Dtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506
9.6. Size:598K way-on
wmb02dn10t1.pdf
WMB02DN10T1 100V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD2 D1D2 D1D1WMB02DN10T1 uses advanced power trench technology that has D2D1D2been especially tailored to minimize the on-state resistance and yet S1G1G2maintain superior switching performance. S2S2G1G2S1Features PDFN5060-8L V = 100V, I = 3.5A DS DR
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