Справочник MOSFET. WMB027N08HG4

 

WMB027N08HG4 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMB027N08HG4
   Маркировка: 027N08H4
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 192.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 195 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 77.9 nC
   trⓘ - Время нарастания: 19.2 ns
   Cossⓘ - Выходная емкость: 960 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0027 Ohm
   Тип корпуса: PDFN5060-8L
     - подбор MOSFET транзистора по параметрам

 

WMB027N08HG4 Datasheet (PDF)

 ..1. Size:640K  way-on
 wmb027n08hg4.pdf pdf_icon

WMB027N08HG4

WMB027N08HG4 80V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB027N08HG4 uses Wayon's 4th generation power trench MOSFET DDtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

 9.1. Size:713K  way-on
 wmb025n06lg4.pdf pdf_icon

WMB027N08HG4

WMB025N06LG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB025N06LG4 uses Wayon's 4th generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5

 9.2. Size:637K  way-on
 wmb023n03lg2.pdf pdf_icon

WMB027N08HG4

WMB023N03LG2 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB023N03LG2 uses Wayon's 2nd generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5

 9.3. Size:648K  way-on
 wmb020n06hg4.pdf pdf_icon

WMB027N08HG4

WMB020N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB020N06HG4 uses Wayon's 4th generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5

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