WMB037N10HGS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMB037N10HGS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 142 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 136 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 29.5 nS
Cossⓘ - Capacitancia de salida: 882 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0037 Ohm
Encapsulados: PDFN5060-8L
Búsqueda de reemplazo de WMB037N10HGS MOSFET
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WMB037N10HGS datasheet
wmb037n10hgs.pdf
WMB037N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMB037N10HGS uses Wayon's advanced power trench MOSFET G ss technology that has been especially tailored to minimize the on-state s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5060-8
wmb034n06hg4.pdf
WMB034N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB034N06HG4 uses Wayon's 4th generation power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This device s ss G s is well suited for high efficiency fast switching applications. PDFN5
wmb034n06lg4.pdf
WMB034N06LG4 60V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB034N06LG4 uses Wayon's 4th generation power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This device s ss G s is well suited for high efficiency fast switching applications. PDFN5
wmb03dn06t1.pdf
WMB03DN06T1 60V Dual N-Channel Enhancement Mode Power MOSFET Description D1 D2 D1 D2 D1 D2 D1 D2 WMB03DN06T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and S1 G1 G2 yet maintain superior switching performance. S2 S2 G1 G2 S1 Features PDFN5060-8L V = 60V, I = 6A DS D R
Otros transistores... WMB023N03LG2, WMB025N06HG4, WMB025N06LG4, WMB027N08HG4, WMB02DN10T1, WMB032N04LG2, WMB034N06HG4, WMB034N06LG4, AON7408, WMB03DN06T1, WMB040N03LG2, WMB040N08HGS, WMB042DN03LG2, WMB043N10HGS, WMB043N10LGS, WMB048NV6HG4, WMB048NV6LG4
History: CS20N65P
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