Справочник MOSFET. WMB037N10HGS

 

WMB037N10HGS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WMB037N10HGS
   Маркировка: 037N10HS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 142 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 136 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 86.5 nC
   trⓘ - Время нарастания: 29.5 ns
   Cossⓘ - Выходная емкость: 882 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0037 Ohm
   Тип корпуса: PDFN5060-8L

 Аналог (замена) для WMB037N10HGS

 

 

WMB037N10HGS Datasheet (PDF)

 ..1. Size:637K  way-on
 wmb037n10hgs.pdf

WMB037N10HGS WMB037N10HGS

WMB037N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB037N10HGS uses Wayon's advanced power trench MOSFET Gsstechnology that has been especially tailored to minimize the on-state sssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5060-8

 9.1. Size:649K  way-on
 wmb034n06hg4.pdf

WMB037N10HGS WMB037N10HGS

WMB034N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB034N06HG4 uses Wayon's 4th generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5

 9.2. Size:988K  way-on
 wmb034n06lg4.pdf

WMB037N10HGS WMB037N10HGS

WMB034N06LG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB034N06LG4 uses Wayon's 4th generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5

 9.3. Size:597K  way-on
 wmb03dn06t1.pdf

WMB037N10HGS WMB037N10HGS

WMB03DN06T1 60V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD1D2D1D2D1 D2D1 D2WMB03DN06T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and S1G1G2yet maintain superior switching performance. S2 S2G1G2S1Features PDFN5060-8L V = 60V, I = 6A DS DR

 9.4. Size:646K  way-on
 wmb032n04lg2.pdf

WMB037N10HGS WMB037N10HGS

WMB032N04LG2 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB032N04LG2 uses Wayon's 2nd generation power trench MOSFET D Dtechnology that has been especially tailored to minimize the on-state Gsssssresistance and yet maintain superior switching performance. This device Gsis well suited for high efficiency fast switching applications. PDFN506

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