All MOSFET. WMB037N10HGS Datasheet

 

WMB037N10HGS MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMB037N10HGS
   Marking Code: 037N10HS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 142 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 136 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 86.5 nC
   trⓘ - Rise Time: 29.5 nS
   Cossⓘ - Output Capacitance: 882 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
   Package: PDFN5060-8L

 WMB037N10HGS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMB037N10HGS Datasheet (PDF)

 ..1. Size:637K  way-on
 wmb037n10hgs.pdf

WMB037N10HGS WMB037N10HGS

WMB037N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB037N10HGS uses Wayon's advanced power trench MOSFET Gsstechnology that has been especially tailored to minimize the on-state sssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5060-8

 9.1. Size:649K  way-on
 wmb034n06hg4.pdf

WMB037N10HGS WMB037N10HGS

WMB034N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB034N06HG4 uses Wayon's 4th generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5

 9.2. Size:988K  way-on
 wmb034n06lg4.pdf

WMB037N10HGS WMB037N10HGS

WMB034N06LG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB034N06LG4 uses Wayon's 4th generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5

 9.3. Size:597K  way-on
 wmb03dn06t1.pdf

WMB037N10HGS WMB037N10HGS

WMB03DN06T1 60V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD1D2D1D2D1 D2D1 D2WMB03DN06T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and S1G1G2yet maintain superior switching performance. S2 S2G1G2S1Features PDFN5060-8L V = 60V, I = 6A DS DR

 9.4. Size:646K  way-on
 wmb032n04lg2.pdf

WMB037N10HGS WMB037N10HGS

WMB032N04LG2 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB032N04LG2 uses Wayon's 2nd generation power trench MOSFET D Dtechnology that has been especially tailored to minimize the on-state Gsssssresistance and yet maintain superior switching performance. This device Gsis well suited for high efficiency fast switching applications. PDFN506

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRLL014

 

 
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