WMB060N10LGS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMB060N10LGS
Código: 060N10LS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 113.6 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 95 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 VQgⓘ - Carga de la puerta: 75 nC
trⓘ - Tiempo de subida: 24.2 nS
Cossⓘ - Capacitancia de salida: 645 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
Paquete / Cubierta: PDFN5060-8L
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WMB060N10LGS Datasheet (PDF)
wmb060n10lgs.pdf
WMB060N10LGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB060N10LGS uses Wayon's advanced power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN5060-8L
wmb060n10hgs.pdf
WMB060N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB060N10HGS uses Wayon's advanced power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN5060-8L
wmb060n08lg2.pdf
WMB060N08LG2 80V N-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB060N08LG2 uses Wayon's 2nd generation power trench MOSFET DDDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN506
wmb060n08hg2.pdf
WMB060N08HG2 80V N-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB060N08HG2 uses Wayon's 2nd generation power trench MOSFET DDDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN5060-
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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