WMB060N10LGS Specs and Replacement
Type Designator: WMB060N10LGS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 113.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 95 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 24.2 nS
Cossⓘ - Output Capacitance: 645 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: PDFN5060-8L
WMB060N10LGS substitution
- MOSFET ⓘ Cross-Reference Search
WMB060N10LGS datasheet
wmb060n10lgs.pdf
WMB060N10LGS 100V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB060N10LGS uses Wayon's advanced power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This s ss G s device is well suited for high efficiency fast switching applications. PDFN5060-8L ... See More ⇒
wmb060n10hgs.pdf
WMB060N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB060N10HGS uses Wayon's advanced power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This s ss G s device is well suited for high efficiency fast switching applications. PDFN5060-8L ... See More ⇒
wmb060n08lg2.pdf
WMB060N08LG2 80V N-Channel Enhancement Mode Power MOSFET Description D D D WMB060N08LG2 uses Wayon's 2nd generation power trench MOSFET DD D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This s ss G s device is well suited for high efficiency fast switching applications. PDFN506... See More ⇒
wmb060n08hg2.pdf
WMB060N08HG2 80V N-Channel Enhancement Mode Power MOSFET Description D D D WMB060N08HG2 uses Wayon's 2nd generation power trench MOSFET DD D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This s ss G s device is well suited for high efficiency fast switching applications. PDFN5060-... See More ⇒
Detailed specifications: WMB048NV6HG4, WMB048NV6LG4, WMB049N12HG2, WMB050N03LG4, WMB053NV8HGS, WMB060N08HG2, WMB060N08LG2, WMB060N10HGS, AON7410, WMB072N12HG2, WMB072N12LG2-S, WMB080N03LG2, WMB080N10LG2, WMB090DN04LG2, WMB090DNV6LG4, WMB090N04LG2, WMB090NV6LG4
Keywords - WMB060N10LGS MOSFET specs
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WMB060N10LGS replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: LNG03R031
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