Справочник MOSFET. WMB060N10LGS

 

WMB060N10LGS Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMB060N10LGS
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 113.6 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 95 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 24.2 ns
   Cossⓘ - Выходная емкость: 645 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0055 Ohm
   Тип корпуса: PDFN5060-8L
 
   - подбор ⓘ MOSFET транзистора по параметрам

 

WMB060N10LGS Datasheet (PDF)

 ..1. Size:985K  way-on
 wmb060n10lgs.pdf pdf_icon

WMB060N10LGS

WMB060N10LGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB060N10LGS uses Wayon's advanced power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN5060-8L

 5.1. Size:414K  way-on
 wmb060n10hgs.pdf pdf_icon

WMB060N10LGS

WMB060N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB060N10HGS uses Wayon's advanced power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN5060-8L

 7.1. Size:532K  way-on
 wmb060n08lg2.pdf pdf_icon

WMB060N10LGS

WMB060N08LG2 80V N-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB060N08LG2 uses Wayon's 2nd generation power trench MOSFET DDDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN506

 7.2. Size:705K  way-on
 wmb060n08hg2.pdf pdf_icon

WMB060N10LGS

WMB060N08HG2 80V N-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB060N08HG2 uses Wayon's 2nd generation power trench MOSFET DDDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN5060-

ПОКАЗАТЬ ЕЩЁ

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