WMB108N03T1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMB108N03T1
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 69 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 108 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 28 nS
Cossⓘ - Capacitancia de salida: 416 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
Paquete / Cubierta: PDFN5060-8L
- Selección de transistores por parámetros
WMB108N03T1 Datasheet (PDF)
wmb108n03t1.pdf

WMB108N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB108N03T1 uses advanced power trench technology that has D DDDDbeen especially tailored to minimize the on-state resistance and Gyet maintain superior switching performance. ssss sGsFeatures PDFN5060-8L V = 30 V, I = 108A DS DR
wmb100n07ts.pdf

WMB100N07TS 70V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDWMB100N07TS uses advanced power trench technology that has DD Dbeen especially tailored to minimize the on-state resistance and yet Gsssmaintain superior switching performance. ssGsFeatures PDFN5060-8L V = 70V, I = 100A DS DR
wmb100p03ts.pdf

WMB100P03TS 30V P-Channel Enhancement Mode Power MOSFET DescriptionWMB100P03TS uses advanced power trench technology that has D DDDDDD Dbeen especially tailored to minimize the on-state resistance and yet Gmaintain superior switching performance. sssssGsFeatures PDFN5060-8L V = -30V, I = -100A DS DR
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: 2N7275H | RRL025P03 | NVMFD5C674NL | GSM2341 | IRF713 | 2SK2196 | BSS123A
History: 2N7275H | RRL025P03 | NVMFD5C674NL | GSM2341 | IRF713 | 2SK2196 | BSS123A



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