All MOSFET. WMB108N03T1 Datasheet

 

WMB108N03T1 Datasheet and Replacement


   Type Designator: WMB108N03T1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 108 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 416 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: PDFN5060-8L
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WMB108N03T1 Datasheet (PDF)

 ..1. Size:984K  way-on
 wmb108n03t1.pdf pdf_icon

WMB108N03T1

WMB108N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB108N03T1 uses advanced power trench technology that has D DDDDbeen especially tailored to minimize the on-state resistance and Gyet maintain superior switching performance. ssss sGsFeatures PDFN5060-8L V = 30 V, I = 108A DS DR

 9.1. Size:536K  way-on
 wmb100n07ts.pdf pdf_icon

WMB108N03T1

WMB100N07TS 70V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDWMB100N07TS uses advanced power trench technology that has DD Dbeen especially tailored to minimize the on-state resistance and yet Gsssmaintain superior switching performance. ssGsFeatures PDFN5060-8L V = 70V, I = 100A DS DR

 9.2. Size:1091K  way-on
 wmb100p03ts.pdf pdf_icon

WMB108N03T1

WMB100P03TS 30V P-Channel Enhancement Mode Power MOSFET DescriptionWMB100P03TS uses advanced power trench technology that has D DDDDDD Dbeen especially tailored to minimize the on-state resistance and yet Gmaintain superior switching performance. sssssGsFeatures PDFN5060-8L V = -30V, I = -100A DS DR

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: CSD18503Q5A | SVD4N65F | 2N4224 | GSM4936S | WM02DH08D | KF5N50IZ | ATM2N65TE

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