WMB175N10HG4 Todos los transistores

 

WMB175N10HG4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMB175N10HG4
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 71.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 46 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3.6 nS
   Cossⓘ - Capacitancia de salida: 144 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0175 Ohm
   Paquete / Cubierta: PDFN5060-8L
 

 Búsqueda de reemplazo de WMB175N10HG4 MOSFET

   - Selección ⓘ de transistores por parámetros

 

WMB175N10HG4 Datasheet (PDF)

 ..1. Size:617K  way-on
 wmb175n10hg4.pdf pdf_icon

WMB175N10HG4

WMB175N10HG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB175N10HG4 uses Wayon's 4th generation power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

 5.1. Size:620K  way-on
 wmb175n10lg4.pdf pdf_icon

WMB175N10HG4

WMB175N10LG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB175N10LG4 uses Wayon's 4th generation power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

 8.1. Size:986K  way-on
 wmb175dn10lg4.pdf pdf_icon

WMB175N10HG4

WMB175DN10LG4 100V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD2 D1D2 D1WMB175DN10LG4 uses Wayon's 4th generation power trench D1D2D1D2MOSFET technology that has been especially tailored to minimize the S1G1G2on-state resistance and yet maintain superior switching performance. S2 S2G1 G2S1This device is well suited for high efficiency fast switchi

Otros transistores... WMB119N10LG2 , WMB119N12HG4 , WMB119N12LG4 , WMB120P06TS , WMB129N10T2 , WMB140NV6LG4 , WMB150N03TS , WMB175DN10LG4 , IRFB31N20D , WMB175N10LG4 , WMB190N15HG4 , WMB240P10HG4 , WMB26DN06TS , WMB26N06TS , WMB31430DN , WMB340N20HG2 , WMB35P04T1 .

History: IRFS252

 

 
Back to Top

 


 
.