WMB175N10HG4 Datasheet and Replacement
Type Designator: WMB175N10HG4
Marking Code: 175N10H4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 71.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 46 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 17 nC
tr ⓘ - Rise Time: 3.6 nS
Cossⓘ - Output Capacitance: 144 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0175 Ohm
Package: PDFN5060-8L
WMB175N10HG4 substitution
WMB175N10HG4 Datasheet (PDF)
wmb175n10hg4.pdf

WMB175N10HG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB175N10HG4 uses Wayon's 4th generation power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50
wmb175n10lg4.pdf

WMB175N10LG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB175N10LG4 uses Wayon's 4th generation power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50
wmb175dn10lg4.pdf

WMB175DN10LG4 100V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD2 D1D2 D1WMB175DN10LG4 uses Wayon's 4th generation power trench D1D2D1D2MOSFET technology that has been especially tailored to minimize the S1G1G2on-state resistance and yet maintain superior switching performance. S2 S2G1 G2S1This device is well suited for high efficiency fast switchi
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: WMO175N10HG4 | STB75NF20 | KP775V | STP75N20 | 6764 | HUF75617D3ST | IPD60R750E6
Keywords - WMB175N10HG4 MOSFET datasheet
WMB175N10HG4 cross reference
WMB175N10HG4 equivalent finder
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WMB175N10HG4 replacement
History: WMO175N10HG4 | STB75NF20 | KP775V | STP75N20 | 6764 | HUF75617D3ST | IPD60R750E6



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