Справочник MOSFET. WMB175N10HG4

 

WMB175N10HG4 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMB175N10HG4
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 71.4 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 46 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 3.6 ns
   Cossⓘ - Выходная емкость: 144 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0175 Ohm
   Тип корпуса: PDFN5060-8L
 

 Аналог (замена) для WMB175N10HG4

   - подбор ⓘ MOSFET транзистора по параметрам

 

WMB175N10HG4 Datasheet (PDF)

 ..1. Size:617K  way-on
wmb175n10hg4.pdfpdf_icon

WMB175N10HG4

WMB175N10HG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB175N10HG4 uses Wayon's 4th generation power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

 5.1. Size:620K  way-on
wmb175n10lg4.pdfpdf_icon

WMB175N10HG4

WMB175N10LG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB175N10LG4 uses Wayon's 4th generation power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

 8.1. Size:986K  way-on
wmb175dn10lg4.pdfpdf_icon

WMB175N10HG4

WMB175DN10LG4 100V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD2 D1D2 D1WMB175DN10LG4 uses Wayon's 4th generation power trench D1D2D1D2MOSFET technology that has been especially tailored to minimize the S1G1G2on-state resistance and yet maintain superior switching performance. S2 S2G1 G2S1This device is well suited for high efficiency fast switchi

Другие MOSFET... WMB119N10LG2 , WMB119N12HG4 , WMB119N12LG4 , WMB120P06TS , WMB129N10T2 , WMB140NV6LG4 , WMB150N03TS , WMB175DN10LG4 , IRFB31N20D , WMB175N10LG4 , WMB190N15HG4 , WMB240P10HG4 , WMB26DN06TS , WMB26N06TS , WMB31430DN , WMB340N20HG2 , WMB35P04T1 .

History: SWB072R06ET | FDD9509L-F085 | SI4862DY | WMB100N07TS | JCS19N20C | TPC8036-H | RJK0330DPB

 

 
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