WMB175N10LG4 Todos los transistores

 

WMB175N10LG4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMB175N10LG4

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 71.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 46 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.6 nS

Cossⓘ - Capacitancia de salida: 144 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm

Encapsulados: PDFN5060-8L

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WMB175N10LG4 datasheet

 ..1. Size:620K  way-on
wmb175n10lg4.pdf pdf_icon

WMB175N10LG4

WMB175N10LG4 100V N-Channel Enhancement Mode Power MOSFET Description D D D DD D D D WMB175N10LG4 uses Wayon's 4th generation power trench MOSFET G technology that has been especially tailored to minimize the on-state ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

 5.1. Size:617K  way-on
wmb175n10hg4.pdf pdf_icon

WMB175N10LG4

WMB175N10HG4 100V N-Channel Enhancement Mode Power MOSFET Description D D D DD D D D WMB175N10HG4 uses Wayon's 4th generation power trench MOSFET G technology that has been especially tailored to minimize the on-state ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

 8.1. Size:986K  way-on
wmb175dn10lg4.pdf pdf_icon

WMB175N10LG4

WMB175DN10LG4 100V Dual N-Channel Enhancement Mode Power MOSFET Description D2 D1 D2 D1 WMB175DN10LG4 uses Wayon's 4th generation power trench D1 D2 D1 D2 MOSFET technology that has been especially tailored to minimize the S1 G1 G2 on-state resistance and yet maintain superior switching performance. S2 S2 G1 G2 S1 This device is well suited for high efficiency fast switchi

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