WMB175N10LG4 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: WMB175N10LG4
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 71.4 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 46 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 3.6 ns
Cossⓘ - Выходная емкость: 144 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.017 Ohm
Тип корпуса: PDFN5060-8L
- подбор MOSFET транзистора по параметрам
WMB175N10LG4 Datasheet (PDF)
wmb175n10lg4.pdf

WMB175N10LG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB175N10LG4 uses Wayon's 4th generation power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50
wmb175n10hg4.pdf

WMB175N10HG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB175N10HG4 uses Wayon's 4th generation power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50
wmb175dn10lg4.pdf

WMB175DN10LG4 100V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD2 D1D2 D1WMB175DN10LG4 uses Wayon's 4th generation power trench D1D2D1D2MOSFET technology that has been especially tailored to minimize the S1G1G2on-state resistance and yet maintain superior switching performance. S2 S2G1 G2S1This device is well suited for high efficiency fast switchi
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: CET04N10 | STD3N30T4 | H5N2004DS | DMP22M2UPS-13
History: CET04N10 | STD3N30T4 | H5N2004DS | DMP22M2UPS-13



Список транзисторов
Обновления
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
Popular searches
2sc680 | 2sd234 | 2sc9014 | a970 transistor | 2sb560 | tip31c transistor equivalent | 2sc1815 datasheet | mj15015