WMB175N10LG4 Specs and Replacement
Type Designator: WMB175N10LG4
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 71.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 46 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.6 nS
Cossⓘ - Output Capacitance: 144 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: PDFN5060-8L
WMB175N10LG4 substitution
- MOSFET ⓘ Cross-Reference Search
WMB175N10LG4 datasheet
wmb175n10lg4.pdf
WMB175N10LG4 100V N-Channel Enhancement Mode Power MOSFET Description D D D DD D D D WMB175N10LG4 uses Wayon's 4th generation power trench MOSFET G technology that has been especially tailored to minimize the on-state ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50... See More ⇒
wmb175n10hg4.pdf
WMB175N10HG4 100V N-Channel Enhancement Mode Power MOSFET Description D D D DD D D D WMB175N10HG4 uses Wayon's 4th generation power trench MOSFET G technology that has been especially tailored to minimize the on-state ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50... See More ⇒
wmb175dn10lg4.pdf
WMB175DN10LG4 100V Dual N-Channel Enhancement Mode Power MOSFET Description D2 D1 D2 D1 WMB175DN10LG4 uses Wayon's 4th generation power trench D1 D2 D1 D2 MOSFET technology that has been especially tailored to minimize the S1 G1 G2 on-state resistance and yet maintain superior switching performance. S2 S2 G1 G2 S1 This device is well suited for high efficiency fast switchi... See More ⇒
Detailed specifications: WMB119N12HG4, WMB119N12LG4, WMB120P06TS, WMB129N10T2, WMB140NV6LG4, WMB150N03TS, WMB175DN10LG4, WMB175N10HG4, STF13NM60N, WMB190N15HG4, WMB240P10HG4, WMB26DN06TS, WMB26N06TS, WMB31430DN, WMB340N20HG2, WMB35P04T1, WMB35P06TS
Keywords - WMB175N10LG4 MOSFET specs
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