WMJ020N10HGS Todos los transistores

 

WMJ020N10HGS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMJ020N10HGS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 347.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 268 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 87.8 nS
   Cossⓘ - Capacitancia de salida: 2120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0023 Ohm
   Paquete / Cubierta: TO247
 

 Búsqueda de reemplazo de WMJ020N10HGS MOSFET

   - Selección ⓘ de transistores por parámetros

 

WMJ020N10HGS Datasheet (PDF)

 ..1. Size:601K  way-on
 wmj020n10hgs.pdf pdf_icon

WMJ020N10HGS

WMJ020N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMJ020N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device SDis well suited for high efficiency fast switching applications.GTO-247Features V = 100V, I = 268A

 9.1. Size:598K  way-on
 wmj028n10hgs.pdf pdf_icon

WMJ020N10HGS

WMJ028N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMJ028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.SDGFeatures TO-247 V = 100V, I = 228A

 9.2. Size:452K  way-on
 wmj023n08hgs.pdf pdf_icon

WMJ020N10HGS

WMJ023N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMJ023N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.SDGFeatures TO-247 V = 80V, I = 280A DS

Otros transistores... WMB80P04TS , WMB81N03T1 , WMB90N02TS , WMB90P03TS , WMB90P04TS , WMB95P06TS , WMC1N40D1 , WMF05N70MM , IRF840 , WMJ023N08HGS , WMJ028N10HGS , WMJ10N100D1 , WMJ11N150D1 , WMJ12N120D1 , WMX12N120D1 , WMJ18N90D1 , WMJ20N50D1 .

History: HM2310 | 9N90C | STK830D

 

 
Back to Top

 


 
.