WMJ020N10HGS Datasheet and Replacement
Type Designator: WMJ020N10HGS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 347.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 268 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 87.8 nS
Cossⓘ - Output Capacitance: 2120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
Package: TO247
WMJ020N10HGS substitution
WMJ020N10HGS Datasheet (PDF)
wmj020n10hgs.pdf

WMJ020N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMJ020N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device SDis well suited for high efficiency fast switching applications.GTO-247Features V = 100V, I = 268A
wmj028n10hgs.pdf

WMJ028N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMJ028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.SDGFeatures TO-247 V = 100V, I = 228A
wmj023n08hgs.pdf

WMJ023N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMJ023N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.SDGFeatures TO-247 V = 80V, I = 280A DS
Datasheet: WMB80P04TS , WMB81N03T1 , WMB90N02TS , WMB90P03TS , WMB90P04TS , WMB95P06TS , WMC1N40D1 , WMF05N70MM , IRF840 , WMJ023N08HGS , WMJ028N10HGS , WMJ10N100D1 , WMJ11N150D1 , WMJ12N120D1 , WMX12N120D1 , WMJ18N90D1 , WMJ20N50D1 .
History: TK19A50W
Keywords - WMJ020N10HGS MOSFET datasheet
WMJ020N10HGS cross reference
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History: TK19A50W



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