WMJ020N10HGS. Аналоги и основные параметры

Наименование производителя: WMJ020N10HGS

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 347.2 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 268 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 87.8 ns

Cossⓘ - Выходная емкость: 2120 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0023 Ohm

Тип корпуса: TO247

Аналог (замена) для WMJ020N10HGS

- подборⓘ MOSFET транзистора по параметрам

 

WMJ020N10HGS даташит

 ..1. Size:601K  way-on
 wmj020n10hgs.pdf pdf_icon

WMJ020N10HGS

WMJ020N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMJ020N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device S D is well suited for high efficiency fast switching applications. G TO-247 Features V = 100V, I = 268A

 9.1. Size:598K  way-on
 wmj028n10hgs.pdf pdf_icon

WMJ020N10HGS

WMJ028N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMJ028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-247 V = 100V, I = 228A

 9.2. Size:452K  way-on
 wmj023n08hgs.pdf pdf_icon

WMJ020N10HGS

WMJ023N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description WMJ023N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-247 V = 80V, I = 280A DS

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