WMJ028N10HGS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMJ028N10HGS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 320.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 228 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 74.5 nS
Cossⓘ - Capacitancia de salida: 1260 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
Encapsulados: TO247
Búsqueda de reemplazo de WMJ028N10HGS MOSFET
- Selecciónⓘ de transistores por parámetros
WMJ028N10HGS datasheet
wmj028n10hgs.pdf
WMJ028N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMJ028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-247 V = 100V, I = 228A
wmj020n10hgs.pdf
WMJ020N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMJ020N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device S D is well suited for high efficiency fast switching applications. G TO-247 Features V = 100V, I = 268A
wmj023n08hgs.pdf
WMJ023N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description WMJ023N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-247 V = 80V, I = 280A DS
Otros transistores... WMB90N02TS , WMB90P03TS , WMB90P04TS , WMB95P06TS , WMC1N40D1 , WMF05N70MM , WMJ020N10HGS , WMJ023N08HGS , IRF540N , WMJ10N100D1 , WMJ11N150D1 , WMJ12N120D1 , WMX12N120D1 , WMJ18N90D1 , WMJ20N50D1 , WMK20N50D1 , WML20N50D1 .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: ASU70R600E | ASU65R850E | ASU65R550E | ASU65R350E | ASR65R120EFD | ASR65R046EFD | ASQ65R046EFD | ASM65R280E | ASM60R330E | ASE70R950E | ASD80R750E | ASD70R950E | ASD70R600E | ASD70R380E | ASD65R850E | ASD65R550E
Popular searches
2sb817 | mn2488 datasheet | c2026 transistor | 2n3903 transistor | 2n4360 | 2n2613 | c2166 transistor | 2sd330