WMJ028N10HGS Specs and Replacement
Type Designator: WMJ028N10HGS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 320.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 228 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 74.5 nS
Cossⓘ - Output Capacitance: 1260 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: TO247
WMJ028N10HGS substitution
- MOSFET ⓘ Cross-Reference Search
WMJ028N10HGS datasheet
wmj028n10hgs.pdf
WMJ028N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMJ028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-247 V = 100V, I = 228A ... See More ⇒
wmj020n10hgs.pdf
WMJ020N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMJ020N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device S D is well suited for high efficiency fast switching applications. G TO-247 Features V = 100V, I = 268A ... See More ⇒
wmj023n08hgs.pdf
WMJ023N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description WMJ023N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-247 V = 80V, I = 280A DS... See More ⇒
Detailed specifications: WMB90N02TS, WMB90P03TS, WMB90P04TS, WMB95P06TS, WMC1N40D1, WMF05N70MM, WMJ020N10HGS, WMJ023N08HGS, IRF540N, WMJ10N100D1, WMJ11N150D1, WMJ12N120D1, WMX12N120D1, WMJ18N90D1, WMJ20N50D1, WMK20N50D1, WML20N50D1
Keywords - WMJ028N10HGS MOSFET specs
WMJ028N10HGS cross reference
WMJ028N10HGS equivalent finder
WMJ028N10HGS pdf lookup
WMJ028N10HGS substitution
WMJ028N10HGS replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: WMK13N50C4
🌐 : EN ES РУ
LIST
Last Update
MOSFET: ASU70R600E | ASU65R850E | ASU65R550E | ASU65R350E | ASR65R120EFD | ASR65R046EFD | ASQ65R046EFD | ASM65R280E | ASM60R330E | ASE70R950E
Popular searches
2sb817 | mn2488 datasheet | c2026 transistor | 2n3903 transistor | 2n4360 | 2n2613 | c2166 transistor | 2sd330
