WMJ028N10HGS MOSFET. Datasheet pdf. Equivalent
Type Designator: WMJ028N10HGS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 320.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 228 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 74.5 nS
Cossⓘ - Output Capacitance: 1260 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: TO247
WMJ028N10HGS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMJ028N10HGS Datasheet (PDF)
wmj028n10hgs.pdf
WMJ028N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMJ028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.SDGFeatures TO-247 V = 100V, I = 228A
wmj020n10hgs.pdf
WMJ020N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMJ020N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device SDis well suited for high efficiency fast switching applications.GTO-247Features V = 100V, I = 268A
wmj023n08hgs.pdf
WMJ023N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMJ023N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.SDGFeatures TO-247 V = 80V, I = 280A DS
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
