Справочник MOSFET. WMJ028N10HGS

 

WMJ028N10HGS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WMJ028N10HGS
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 320.5 W
   Предельно допустимое напряжение сток-исток |Uds|: 100 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 228 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 145 nC
   Время нарастания (tr): 74.5 ns
   Выходная емкость (Cd): 1260 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.003 Ohm
   Тип корпуса: TO247

 Аналог (замена) для WMJ028N10HGS

 

 

WMJ028N10HGS Datasheet (PDF)

 ..1. Size:598K  way-on
wmj028n10hgs.pdf

WMJ028N10HGS
WMJ028N10HGS

WMJ028N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMJ028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.SDGFeatures TO-247 V = 100V, I = 228A

 9.1. Size:601K  way-on
wmj020n10hgs.pdf

WMJ028N10HGS
WMJ028N10HGS

WMJ020N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMJ020N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device SDis well suited for high efficiency fast switching applications.GTO-247Features V = 100V, I = 268A

 9.2. Size:452K  way-on
wmj023n08hgs.pdf

WMJ028N10HGS
WMJ028N10HGS

WMJ023N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMJ023N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.SDGFeatures TO-247 V = 80V, I = 280A DS

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top