Справочник MOSFET. WMJ028N10HGS

 

WMJ028N10HGS Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMJ028N10HGS
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 320.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 228 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 74.5 ns
   Cossⓘ - Выходная емкость: 1260 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.003 Ohm
   Тип корпуса: TO247
 

 Аналог (замена) для WMJ028N10HGS

   - подбор ⓘ MOSFET транзистора по параметрам

 

WMJ028N10HGS Datasheet (PDF)

 ..1. Size:598K  way-on
 wmj028n10hgs.pdf pdf_icon

WMJ028N10HGS

WMJ028N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMJ028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.SDGFeatures TO-247 V = 100V, I = 228A

 9.1. Size:601K  way-on
 wmj020n10hgs.pdf pdf_icon

WMJ028N10HGS

WMJ020N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMJ020N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device SDis well suited for high efficiency fast switching applications.GTO-247Features V = 100V, I = 268A

 9.2. Size:452K  way-on
 wmj023n08hgs.pdf pdf_icon

WMJ028N10HGS

WMJ023N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMJ023N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.SDGFeatures TO-247 V = 80V, I = 280A DS

Другие MOSFET... WMB90N02TS , WMB90P03TS , WMB90P04TS , WMB95P06TS , WMC1N40D1 , WMF05N70MM , WMJ020N10HGS , WMJ023N08HGS , IRF540 , WMJ10N100D1 , WMJ11N150D1 , WMJ12N120D1 , WMX12N120D1 , WMJ18N90D1 , WMJ20N50D1 , WMK20N50D1 , WML20N50D1 .

History: IRFZ25 | BUZ100L

 

 
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