WMJ90N60C4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMJ90N60C4

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 430 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 90 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 79 nS

Cossⓘ - Capacitancia de salida: 250 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.029 Ohm

Encapsulados: TO247

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WMJ90N60C4 datasheet

 ..1. Size:542K  way-on
 wmj90n60c4.pdf pdf_icon

WMJ90N60C4

WM C4 MJ90N60C 600V 0.024 S 0 Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-re and low ga charge performanc WMOSTM C4 is ate ce. suitable fo applicat which require superior or tions h S D G power density and o

 6.1. Size:542K  way-on
 wmj90n60f2.pdf pdf_icon

WMJ90N60C4

WM F2 MJ90N60F 600V 0.025 S 0 Super Junction Power MOSFET Descrip ption WMOSTM F2 is Wa 2nd generation super ayon s n junction MOSFET fam with fa body di F2 M mily ast iode. series pro all benefits of a fast switching ovide b f s SJ-MOSFE while of an extremely fa body ET ffering e ast diode. WM F2 makes especially resonant MOSTM e r S D G switching a s more

 7.1. Size:542K  way-on
 wmj90n65f2.pdf pdf_icon

WMJ90N60C4

WM F2 MJ90N65F 650V 0.025 S 0 Super Junction Power MOSFET Descrip ption WMOSTM F2 is Wa 2nd generation super ayon s n junction MOSFET fam with fa body di F2 M mily ast iode. series pro all benefits of a fast switching ovide b f s SJ-MOSFE while of an extremely fa body ET ffering e ast diode. WM F2 makes especially resonant MOSTM e r S D G switching a s more

 7.2. Size:543K  way-on
 wmj90n65c4.pdf pdf_icon

WMJ90N60C4

WM C4 MJ90N65C 650V 0.024 S 0 Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-re and low ga charge performanc WMOSTM C4 is ate ce. suitable fo applicat which require superior or tions h S D G power density and o

MOSTRAR MÁS

Otros transistores... WMX4N150D1, WMK4N150D1, WMJ60N60EM, WMJ69N30DMH, WMJ80N60C4, WMJ80N60F2, WMJ80N65C4, WMJ80N65F2, AON7408, WMJ90N60F2, WMJ90N65C4, WMJ90N65F2, WMJ99N60C4, WMJ99N60F2, WMJ9N150D1, WMJ9N90D1B, WML9N90D1B