WMJ90N60C4 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: WMJ90N60C4
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 430 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 90 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 79 ns
Cossⓘ - Выходная емкость: 250 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.029 Ohm
Тип корпуса: TO247
- подбор MOSFET транзистора по параметрам
WMJ90N60C4 Datasheet (PDF)
wmj90n60c4.pdf

WM C4 MJ90N60C 600V 0.024 S0 Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-reand low ga charge performanc WMOSTM C4 is ate ce. suitable fo applicat which require superior or tions h S D G power density and o
wmj90n60f2.pdf

WM F2 MJ90N60F 600V 0.025 S0 Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons n junction MOSFET fam with fa body di F2 M mily ast iode. series pro all benefits of a fast switching ovide b f sSJ-MOSFE while of an extremely fa body ET ffering e ast diode. WM F2 makes especially resonant MOSTM e rS D G switching a s more
wmj90n65f2.pdf

WM F2 MJ90N65F 650V 0.025 S0 Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons n junction MOSFET fam with fa body di F2 M mily ast iode. series pro all benefits of a fast switching ovide b f sSJ-MOSFE while of an extremely fa body ET ffering e ast diode. WM F2 makes especially resonant MOSTM e rS D G switching a s more
wmj90n65c4.pdf

WM C4 MJ90N65C 650V 0.024 S0 Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-reand low ga charge performanc WMOSTM C4 is ate ce. suitable fo applicat which require superior or tions h S D G power density and o
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: CHM5P03PAGP | FRE260H | RJK5013DPP-E0 | MTB04N03E3 | AOT7S65L | FRE264D | QM6014S
History: CHM5P03PAGP | FRE260H | RJK5013DPP-E0 | MTB04N03E3 | AOT7S65L | FRE264D | QM6014S



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