All MOSFET. WMJ90N60C4 Datasheet

 

WMJ90N60C4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMJ90N60C4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 430 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.3 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 142 nC
   trⓘ - Rise Time: 79 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: TO247

 WMJ90N60C4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMJ90N60C4 Datasheet (PDF)

 ..1. Size:542K  way-on
 wmj90n60c4.pdf

WMJ90N60C4 WMJ90N60C4

WM C4 MJ90N60C 600V 0.024 S0 Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-reand low ga charge performanc WMOSTM C4 is ate ce. suitable fo applicat which require superior or tions h S D G power density and o

 6.1. Size:542K  way-on
 wmj90n60f2.pdf

WMJ90N60C4 WMJ90N60C4

WM F2 MJ90N60F 600V 0.025 S0 Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons n junction MOSFET fam with fa body di F2 M mily ast iode. series pro all benefits of a fast switching ovide b f sSJ-MOSFE while of an extremely fa body ET ffering e ast diode. WM F2 makes especially resonant MOSTM e rS D G switching a s more

 7.1. Size:542K  way-on
 wmj90n65f2.pdf

WMJ90N60C4 WMJ90N60C4

WM F2 MJ90N65F 650V 0.025 S0 Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons n junction MOSFET fam with fa body di F2 M mily ast iode. series pro all benefits of a fast switching ovide b f sSJ-MOSFE while of an extremely fa body ET ffering e ast diode. WM F2 makes especially resonant MOSTM e rS D G switching a s more

 7.2. Size:543K  way-on
 wmj90n65c4.pdf

WMJ90N60C4 WMJ90N60C4

WM C4 MJ90N65C 650V 0.024 S0 Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-reand low ga charge performanc WMOSTM C4 is ate ce. suitable fo applicat which require superior or tions h S D G power density and o

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SDF4NA100SXH

 

 
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