WMK028N08HGD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMK028N08HGD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 166.6 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 167 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24.4 nS
Cossⓘ - Capacitancia de salida: 1200 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0033 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de WMK028N08HGD MOSFET
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WMK028N08HGD datasheet
wmk028n08hgd.pdf
WMK028N08HGD 100V N-Channel Enhancement Mode Power MOSFET Description WMK028N08HGD uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D Features G TO-220 V = 80V, I = 167A
wmk028n10hgs.pdf
WMK028N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMK028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 100V, I = 257A
wmk028n10hg2.pdf
WMK028N10HG2 100V N-Channel Enhancement Mode Power MOSFET Description WMK028N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V =100V, I = 2
wmk023n08hgs.pdf
WMK023N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description WMK023N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 80V, I = 270A DS
Otros transistores... WMJ90N65F2 , WMJ99N60C4 , WMJ99N60F2 , WMJ9N150D1 , WMJ9N90D1B , WML9N90D1B , WMK020N06HG4 , WMK023N08HGS , SPP20N60C3 , WMK028N10HG2 , WMK028N10HGS , WMK030N06HG4 , WMK030N06LG4 , WMK036N12HGS , WMK037N10HGS , WMK040N08HGS , WMK043N10HGS .
History: WMM12N100C2 | WMK048NV6HG4 | WMK099N10HGS
History: WMM12N100C2 | WMK048NV6HG4 | WMK099N10HGS
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