All MOSFET. WMK028N08HGD Datasheet

 

WMK028N08HGD Datasheet and Replacement


   Type Designator: WMK028N08HGD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 166.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 167 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 24.4 nS
   Cossⓘ - Output Capacitance: 1200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: TO220
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WMK028N08HGD Datasheet (PDF)

 ..1. Size:620K  way-on
 wmk028n08hgd.pdf pdf_icon

WMK028N08HGD

WMK028N08HGD 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK028N08HGD uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDFeatures GTO-220 V = 80V, I = 167A

 7.1. Size:618K  way-on
 wmk028n10hgs.pdf pdf_icon

WMK028N08HGD

WMK028N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I = 257A

 7.2. Size:607K  way-on
 wmk028n10hg2.pdf pdf_icon

WMK028N08HGD

WMK028N10HG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK028N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V =100V, I = 2

 9.1. Size:595K  way-on
 wmk023n08hgs.pdf pdf_icon

WMK028N08HGD

WMK023N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMK023N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.SDGFeatures TO-220 V = 80V, I = 270A DS

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STD6N60M2 | IRFP21N60L | AP2318GEN-HF | STT3P2UH7 | UPA2756GR | IXTA08N120P

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