WMK028N08HGD MOSFET Datasheet: N-Ch, 80V, 167A. Full specification with pinout and replacement list

WMK028N08HGD Specs and Replacement

Type Designator: WMK028N08HGD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 166.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 167 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24.4 nS

Cossⓘ - Output Capacitance: 1200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm

Package: TO220

WMK028N08HGD substitution

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WMK028N08HGD datasheet

..1. Size:620K way-on
wmk028n08hgd.pdf pdf_icon

WMK028N08HGD 100V N-Channel Enhancement Mode Power MOSFET Description WMK028N08HGD uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D Features G TO-220 V = 80V, I = 167A ... See More ⇒

7.1. Size:618K way-on
wmk028n10hgs.pdf pdf_icon

WMK028N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMK028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 100V, I = 257A ... See More ⇒

7.2. Size:607K way-on
wmk028n10hg2.pdf pdf_icon

WMK028N10HG2 100V N-Channel Enhancement Mode Power MOSFET Description WMK028N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V =100V, I = 2... See More ⇒

9.1. Size:595K way-on
wmk023n08hgs.pdf pdf_icon

WMK023N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description WMK023N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 80V, I = 270A DS... See More ⇒