Справочник MOSFET. WMK028N08HGD

 

WMK028N08HGD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WMK028N08HGD
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 166.6 W
   Предельно допустимое напряжение сток-исток |Uds|: 80 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 3.5 V
   Максимально допустимый постоянный ток стока |Id|: 167 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 108.2 nC
   Время нарастания (tr): 24.4 ns
   Выходная емкость (Cd): 1200 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0033 Ohm
   Тип корпуса: TO220

 Аналог (замена) для WMK028N08HGD

 

 

WMK028N08HGD Datasheet (PDF)

 ..1. Size:620K  way-on
wmk028n08hgd.pdf

WMK028N08HGD
WMK028N08HGD

WMK028N08HGD 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK028N08HGD uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDFeatures GTO-220 V = 80V, I = 167A

 7.1. Size:618K  way-on
wmk028n10hgs.pdf

WMK028N08HGD
WMK028N08HGD

WMK028N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I = 257A

 7.2. Size:607K  way-on
wmk028n10hg2.pdf

WMK028N08HGD
WMK028N08HGD

WMK028N10HG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK028N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V =100V, I = 2

 9.1. Size:595K  way-on
wmk023n08hgs.pdf

WMK028N08HGD
WMK028N08HGD

WMK023N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMK023N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.SDGFeatures TO-220 V = 80V, I = 270A DS

 9.2. Size:596K  way-on
wmk020n06hg4.pdf

WMK028N08HGD
WMK028N08HGD

WMK020N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMK020N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 60V, I = 25

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