WMK028N10HGS Todos los transistores

 

WMK028N10HGS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMK028N10HGS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 379 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 257 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 78.5 nS

Cossⓘ - Capacitancia de salida: 1505 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm

Encapsulados: TO220

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WMK028N10HGS datasheet

 ..1. Size:618K  way-on
 wmk028n10hgs.pdf pdf_icon

WMK028N10HGS

WMK028N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMK028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 100V, I = 257A

 3.1. Size:607K  way-on
 wmk028n10hg2.pdf pdf_icon

WMK028N10HGS

WMK028N10HG2 100V N-Channel Enhancement Mode Power MOSFET Description WMK028N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V =100V, I = 2

 7.1. Size:620K  way-on
 wmk028n08hgd.pdf pdf_icon

WMK028N10HGS

WMK028N08HGD 100V N-Channel Enhancement Mode Power MOSFET Description WMK028N08HGD uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D Features G TO-220 V = 80V, I = 167A

 9.1. Size:595K  way-on
 wmk023n08hgs.pdf pdf_icon

WMK028N10HGS

WMK023N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description WMK023N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 80V, I = 270A DS

MOSTRAR MÁS

Otros transistores... WMJ99N60F2 , WMJ9N150D1 , WMJ9N90D1B , WML9N90D1B , WMK020N06HG4 , WMK023N08HGS , WMK028N08HGD , WMK028N10HG2 , K4145 , WMK030N06HG4 , WMK030N06LG4 , WMK036N12HGS , WMK037N10HGS , WMK040N08HGS , WMK043N10HGS , WMK043N10LGS , WMK048NV6HG4 .

History: WMK07N105C2 | VN0335N1 | 5N20A | BLM8205A | NCE2305A | WMJ12N105C2 | WMK11N80M3

 

 

 

 

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