WMK028N10HGS Specs and Replacement

Type Designator: WMK028N10HGS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 379 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 257 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 78.5 nS

Cossⓘ - Output Capacitance: 1505 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: TO220

WMK028N10HGS substitution

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WMK028N10HGS datasheet

 ..1. Size:618K  way-on
 wmk028n10hgs.pdf pdf_icon

WMK028N10HGS

WMK028N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMK028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 100V, I = 257A ... See More ⇒

 3.1. Size:607K  way-on
 wmk028n10hg2.pdf pdf_icon

WMK028N10HGS

WMK028N10HG2 100V N-Channel Enhancement Mode Power MOSFET Description WMK028N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V =100V, I = 2... See More ⇒

 7.1. Size:620K  way-on
 wmk028n08hgd.pdf pdf_icon

WMK028N10HGS

WMK028N08HGD 100V N-Channel Enhancement Mode Power MOSFET Description WMK028N08HGD uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D Features G TO-220 V = 80V, I = 167A ... See More ⇒

 9.1. Size:595K  way-on
 wmk023n08hgs.pdf pdf_icon

WMK028N10HGS

WMK023N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description WMK023N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 80V, I = 270A DS... See More ⇒

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Detailed specifications: WMJ99N60F2, WMJ9N150D1, WMJ9N90D1B, WML9N90D1B, WMK020N06HG4, WMK023N08HGS, WMK028N08HGD, WMK028N10HG2, K4145, WMK030N06HG4, WMK030N06LG4, WMK036N12HGS, WMK037N10HGS, WMK040N08HGS, WMK043N10HGS, WMK043N10LGS, WMK048NV6HG4

Keywords - WMK028N10HGS MOSFET specs

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