WMK028N10HGS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: WMK028N10HGS
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 379 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 257 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 150 nC
Время нарастания (tr): 78.5 ns
Выходная емкость (Cd): 1505 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.003 Ohm
Тип корпуса: TO220
Аналог (замена) для WMK028N10HGS
WMK028N10HGS Datasheet (PDF)
wmk028n10hgs.pdf
WMK028N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK028N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 100V, I = 257A
wmk028n10hg2.pdf
WMK028N10HG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK028N10HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V =100V, I = 2
wmk028n08hgd.pdf
WMK028N08HGD 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK028N08HGD uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDFeatures GTO-220 V = 80V, I = 167A
wmk023n08hgs.pdf
WMK023N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionWMK023N08HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications.SDGFeatures TO-220 V = 80V, I = 270A DS
wmk020n06hg4.pdf
WMK020N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMK020N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 60V, I = 25
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