WMK036N12HGS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMK036N12HGS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 120 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 188 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 50.6 nS

Cossⓘ - Capacitancia de salida: 733 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0036 Ohm

Encapsulados: TO220

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WMK036N12HGS datasheet

 ..1. Size:644K  way-on
 wmk036n12hgs.pdf pdf_icon

WMK036N12HGS

WMK036N12HGS 120V N-Channel Enhancement Mode Power MOSFET Description WMK036N12HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 120V, I = 188A

 9.1. Size:634K  way-on
 wmk030n06lg4.pdf pdf_icon

WMK036N12HGS

WMK030N06LG4 60V N-Channel Enhancement Mode Power MOSFET Description WMK030N06LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D Features G TO-220 V = 60V, I = 18

 9.2. Size:669K  way-on
 wml03n80m3 wmn03n80m3 wmm03n80m3 wmo03n80m3 wmp03n80m3 wmk03n80m3.pdf pdf_icon

WMK036N12HGS

WML03N80M3, W 80M3, WM M3 WMN03N8 MM03N80M WMO0 80M3, WM M3 03N80M3, WMP03N8 MK03N80M 800 Junction ET 0V 3.0 Super J n Power MOSFE Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge perf

 9.3. Size:619K  way-on
 wmk037n10hgs.pdf pdf_icon

WMK036N12HGS

WMK037N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMK037N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S Features D G TO-220 V = 100V, I = 170A

MOSTRAR MÁS

Otros transistores... WML9N90D1B, WMK020N06HG4, WMK023N08HGS, WMK028N08HGD, WMK028N10HG2, WMK028N10HGS, WMK030N06HG4, WMK030N06LG4, 12N60, WMK037N10HGS, WMK040N08HGS, WMK043N10HGS, WMK043N10LGS, WMK048NV6HG4, WMK048NV6LG4, WMK053N10HGS, WMK053NV8HGS