WMK036N12HGS MOSFET. Datasheet pdf. Equivalent
Type Designator: WMK036N12HGS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 188 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 144 nC
Rise Time (tr): 50.6 nS
Drain-Source Capacitance (Cd): 733 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0036 Ohm
Package: TO220
WMK036N12HGS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMK036N12HGS Datasheet (PDF)
wmk036n12hgs.pdf
WMK036N12HGS 120V N-Channel Enhancement Mode Power MOSFET DescriptionWMK036N12HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDGFeatures TO-220 V = 120V, I = 188A
wmk030n06lg4.pdf
WMK030N06LG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMK030N06LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDFeatures GTO-220 V = 60V, I = 18
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WML03N80M3, W 80M3, WM M3 WMN03N8 MM03N80MWMO0 80M3, WM M3 03N80M3, WMP03N8 MK03N80M 800 Junction ET0V 3.0 Super J n Power MOSFEDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge perf
wmk037n10hgs.pdf
WMK037N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMK037N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SFeatures DGTO-220 V = 100V, I = 170A
wmk030n06hg4.pdf
WMK030N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionWMK030N06HG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. SDFeatures GTO-220 V = 60V, I = 18
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
