WMK036N12HGS MOSFET Datasheet: N-Ch, 120V, 188A. Full specification with pinout and replacement list

WMK036N12HGS Specs and Replacement

Type Designator: WMK036N12HGS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 188 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50.6 nS

Cossⓘ - Output Capacitance: 733 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm

Package: TO220

WMK036N12HGS substitution

- MOSFET ⓘ Cross-Reference Search

WMK036N12HGS datasheet

..1. Size:644K way-on
wmk036n12hgs.pdf pdf_icon

WMK036N12HGS 120V N-Channel Enhancement Mode Power MOSFET Description WMK036N12HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D G Features TO-220 V = 120V, I = 188A ... See More ⇒

9.1. Size:634K way-on
wmk030n06lg4.pdf pdf_icon

WMK030N06LG4 60V N-Channel Enhancement Mode Power MOSFET Description WMK030N06LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S D Features G TO-220 V = 60V, I = 18... See More ⇒

9.2. Size:669K way-on
wml03n80m3 wmn03n80m3 wmm03n80m3 wmo03n80m3 wmp03n80m3 wmk03n80m3.pdf pdf_icon

WML03N80M3, W 80M3, WM M3 WMN03N8 MM03N80M WMO0 80M3, WM M3 03N80M3, WMP03N8 MK03N80M 800 Junction ET 0V 3.0 Super J n Power MOSFE Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge perf... See More ⇒

9.3. Size:619K way-on
wmk037n10hgs.pdf pdf_icon

WMK037N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description WMK037N10HGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. S Features D G TO-220 V = 100V, I = 170A ... See More ⇒